CLEANING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

摘要

The present invention relates to a method for cleaning a substrate such as a semiconductor substrate for the manufacture of an integrated circuit. The method includes cleaning a semiconductor substrate with a first mixture consisting of ozone and at least one of an acid and a base, followed by a second mixture consisting of ozone and the other one of the acid and base. The cleaning mixtures can further include ultrapure water. According to one embodiment of the present invention, the mixtures can be applied on a surface of the heated substrate. The acid can be HF and the base can be NH_4OH.