| 摘要 |
The present invention provides a quantum dot light emitting device having improved performance by including a new electron transport layer, and a manufacturing method thereof. The quantum dot light emitting device according to the present invention comprises: a hole transport layer; a quantum dot light emitting layer; and an electron transport layer, wherein the electron transport layer includes Zn-contained metal oxide nanoparticles in which metal capable of increasing a ZnO bandgap is alloyed. When the bandgap of the ZnO nanoparticles is increased according to the present invention, upshift of conduction band minimum (CBM) potential occurs, to cause energy proximity between the nanoparticle electron transport layer and the CBM of the quantum dot light emitting layer and therefore, an electron energy barrier is lowered and as a result, electron injection to a quantum dot area is promoted. Accordingly, brightness and efficiency are excellent, and higher light emitting efficiency can be obtained even at a lower driving voltage. |
