| 摘要 |
A semiconductor device having a through silicon via includes: a substrate including a first plane and a second plane; a through silicon via which penetrates a substrate from the first plane to the second plane, and has a protrusion part protruded from the second plane of the substrate; a front bump which is electrically connected to the through silicon via, and is formed on the first plane of the substrate; a first passivation pattern which is arranged on the first plane of the substrate, and is formed by including a first protruded part protruded higher than the upper plane of the front bump by a fixed height; and a second passivation pattern which is formed by including a second protruded part which covers a part of a side wall of the protruded part of the through silicon via and is protruded toward a direction of the protruded part. |
