COMPOSITION FOR SURFACE MODIFICATION OF INSULATOR, METHOD FOR SURFACE MODIFICATION OF INSULATOR, INSULATOR, AND THIN FILM TRANSISTOR

摘要

The present invention relates to a composition for surface modification of an insulator, which comprises a compound including a structure unit represented by chemical formula 1 and a structure unit represented by chemical formula 2 at least at one end; a surface modification method of an insulator; a surface modified insulator; and an electronic device comprising the insulator. In chemical formula 1 and 2, the definition of R^a, R^b, R^c, L^1, n, m, and k are the same as defined in the specification.