发明名称 COMPONENT FOR PLASMA PROCESSING APPARATUS, AND MANUFACTURING METHOD THEREFOR
摘要 According to the present invention, the generation of particles from a thermal spray film of yttrium fluoride is prevented. Provided is a component which is exposed to plasma in a plasma processing apparatus. The component has a substrate and a film. The substrate, for example, is made of Al or Al alloy. An alumite layer may be formed on the surface of the substrate. The film is formed by spraying yttrium fluoride onto the substrate or a lower surface including a layer prepared on the substrate. The porosity in the film of the component is 4% or less. The arithmetical mean illuminance (Ra) of the surface of a corresponding film is 4.5 μm or less.
申请公布号 KR20160033047(A) 申请公布日期 2016.03.25
申请号 KR20150130198 申请日期 2015.09.15
申请人 TOKYO ELECTRON LIMITED;TOCALO CO., LTD. 发明人 NAGAYAMA NOBUYUKI;MITSUHASHI KOJI;ABUKAWA SHIKOU;NAGAI MASAYA;KANAZAWA YOSHINORI;NIYA TETSUYA
分类号 H01J37/32 主分类号 H01J37/32
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