发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
摘要 |
The present invention provides a structure and a technology capable of maintaining the temperature of a substrate susceptor equal to or lower than a fixed temperature as absorbing received heat of reaction heat generated by substrate processing even in a low temperature region. The substrate processing apparatus includes: the substrate susceptor including a heating element and a cooling flow path; a heating element power source for supplying electricity to the heating element; a heat detector having a heat detection part which is arranged on a lower side then an upper plane of the substrate susceptor, and on an upper side than the lower part of the cooling flow path and the heating element; a coolant supply part for supplying a coolant to the cooling flow path; and a control part for controlling the heating element power source and the coolant supply part in order to supply first electricity to the heating element while the substrate is not received on the substrate susceptor, and to supply second electricity when processing of the substrate received on the substrate susceptor is performed, while supplying the coolant to the cooling flow path. |
申请公布号 |
KR20160033028(A) |
申请公布日期 |
2016.03.25 |
申请号 |
KR20150117612 |
申请日期 |
2015.08.21 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YANAI HIDEHIRO;YANAGISAWA YOSHIHIKO;TSUBOTA YASUTOSHI |
分类号 |
H01L21/324;H01L21/311;H01L21/3213;H01L21/66;H01L21/683 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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