| 摘要 |
The present invention relates to a manufacturing method of substrate growth graphene, and to substrate growth graphene. The manufacturing method comprises: a. being equipped with a metal layer on a substrate; b. supplying carbon-containing gas and etching gas, and performing low-pressure chemical vapor deposition (LPCVD); c. supplying carbon-containing gas with the etching gas supply, and growing graphene on a metal layer; and d. growing the graphene on a substrate in which the metal layer is not contained, by continuously removing the entire metal in the metal layer, due to the etching gas, while performing the continuous low-pressure chemical vapor deposition (LPCVD), in c process. |
