发明名称 |
INFRARED IMAGE SENSOR |
摘要 |
An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately. |
申请公布号 |
US2016087000(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201514855016 |
申请日期 |
2015.09.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
INADA Hiroshi;BALASEKARAN Sundararajan |
分类号 |
H01L27/146;H01L31/0352;H01L31/0304 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. An infrared image sensor comprising:
a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal, wherein the photodiode includes an optical absorption layer made of a III-V group compound semiconductor; and the optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately. |
地址 |
Osaka JP |