发明名称 |
INTEGRATED LEVEL SHIFTER |
摘要 |
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits. |
申请公布号 |
WO2016044479(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
WO2015US50516 |
申请日期 |
2015.09.16 |
申请人 |
NAVITAS SEMICONDUCTOR, INC. |
发明人 |
KINZER, DANIEL M.;SHARMA, SANTOSH;ZHANG, JU JASON |
分类号 |
H01L27/06;H01L29/06;H01L29/78 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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