| 摘要 |
A quartz crucible used for repeatedly pulling monocrystalline silicon for multiple times and a manufacturing method therefor, wherein the volume density (bubble volume/total volume×100%) of microbubbles within the depth of 1 mm in the surface of the quartz crucible is lower than 0.0005%. The method comprises: introducing hydrogen, nitrogen, helium, argon, or one or more of other inert gases in the melting process of the quartz crucible to replace the residual air among quartz sand particles, and melting and refining the inner surface of the quartz glass crucible again to remove the microbubbles wrapped in a bubble depletion layer and suppress the residual microbubbles from expanding in the high-temperature use process of the crucible. The quartz crucible manufactured by this method has the characteristic of resisting the continuous high temperature for a long time, and meets the demand of repeated batch charging and the demand of pulling the monocrystalline of a monocrystalline manufacturer. |
