发明名称 |
NITRIDE SEMICONDUCTOR TEMPLATE MANUFACTURING METHOD |
摘要 |
This nitride semiconductor template manufacturing method involves: a step for growing a buffer layer on a sapphire substrate which has a lattice arrangement of conical or pyramidal protrusions formed on the surface thereof, the thickness of the buffer layer being 10-330nm and less than or equal to the protrusion top width; and a step for growing a nitride semiconductor layer on the buffer layer. |
申请公布号 |
WO2016042891(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
WO2015JP69589 |
申请日期 |
2015.07.08 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
FUJIKURA HAJIME |
分类号 |
C30B29/38;C23C16/34;H01L21/205;H01L33/22;H01L33/32 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|