| 摘要 |
A load sensor is provided with: a substrate (101); a rib (102) on the substrate; and two vertical transistors (11, 12, 21-24, 31, 32, 41-44, 51-56). Each of the vertical transistors has: a gate electrode (103) on the side surface of the rib; a gate insulating film (104); a semiconductor thin film (105); a bottom electrode layer (106) in contact with the semiconductor thin film on the bottom surface of the substrate, said bottom surface not having the rib formed thereon; and a top electrode layer (107) in contact with the semiconductor thin film on the upper surface of the rib. Each of the vertical transistors has a channel region that is formed in the semiconductor thin film, and flows a current between the bottom electrode layer and the top electrode layer. The vertical transistors are disposed on different side surfaces of the rib such that straight lines in the normal line directions of the channel regions of respective vertical transistors form a predetermined angle therebetween. |
