发明名称 |
HIGH VOLTAGE SEMICONDUCTOR DEVICES |
摘要 |
We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device. |
申请公布号 |
WO2016042330(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
WO2015GB52689 |
申请日期 |
2015.09.17 |
申请人 |
ANVIL SEMICONDUCTORS LIMITED |
发明人 |
WARD, PETER;LOPHITIS, NEOPHYTOS;TRAJKOVIC, TANYA;UDREA, FLORIN |
分类号 |
H01L29/861;H01L29/06;H01L29/08;H01L29/10;H01L29/16;H01L29/20;H01L29/24;H01L29/267;H01L29/40;H01L29/872 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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