发明名称 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES AND INCORPORATING DOTTED DIFFUSION
摘要 Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
申请公布号 US2016087122(A1) 申请公布日期 2016.03.24
申请号 US201414491045 申请日期 2014.09.19
申请人 Westerberg Staffan;Harley Gabriel 发明人 Westerberg Staffan;Harley Gabriel
分类号 H01L31/0224;H01L31/18;H01L31/0236;H01L31/028;H01L31/0368 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A solar cell, comprising: a substrate having a light-receiving surface and a back surface; a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate; and a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
地址 Sunnyvale CA US