发明名称 |
SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES AND INCORPORATING DOTTED DIFFUSION |
摘要 |
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate. |
申请公布号 |
US2016087122(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201414491045 |
申请日期 |
2014.09.19 |
申请人 |
Westerberg Staffan;Harley Gabriel |
发明人 |
Westerberg Staffan;Harley Gabriel |
分类号 |
H01L31/0224;H01L31/18;H01L31/0236;H01L31/028;H01L31/0368 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell, comprising:
a substrate having a light-receiving surface and a back surface; a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate; and a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate. |
地址 |
Sunnyvale CA US |