LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

The present disclosure relates to a lateral double-diffused metal oxide semiconductor transistor and a method for manufacturing the same. In the method, a high-voltage gate dielectric is formed at a surface of a semiconductor layer. A thin gate dielectric is formed above the substrate and has at least a portion adjacent to the high-voltage gate dielectric. A gate conductor is formed above the thin gate dielectric and the high-voltage gate dielectric. A first mask is used for patterning the gate conductor to define a first sidewall of the gate conductor above the thin gate dielectric. A second mask is used for patterning the gate conductor to define a second sidewall of the gate conductor at least partially above the high-voltage gate dielectric. Source and drain regions are formed to have a first doping type. The method further comprises doping through the first mask to form a body region of a second doping type. The second doping type is opposite to the first doping type. The method simplifies a manufacturer process and improves reliability of the resultant devices.

主权项

1. A method for manufacturing a lateral double-diffused metal oxide semiconductor transistor, comprising:
forming a semiconductor layer of a first doping type; forming a high-voltage gate dielectric at a surface of said semiconductor layer; forming a thin gate dielectric above said semiconductor layer to have at least a portion adjacent to said high-voltage gate dielectric; forming a gate conduct above said thin gate dielectric and said high-voltage gate dielectric; forming a first sidewall of said gate conductor above said thin gate dielectric, by patterning said gate conductor through a first mask; forming a second sidewall of said gate conductor at least partially above said high-voltage gate dielectric, by patterning said gate conductor through a second mask; and forming source and drain regions of said first doping type, wherein said method further comprises forming a body region of a second doping type opposite to said first doping type by doping through said first mask.