| 发明名称 |
SEMICONDUCTOR DEVICE WITH PARTIALLY UNSILICIDED SOURCE/DRAIN |
| 摘要 |
A transistor includes a substrate and a gate over the substrate. The transistor further includes a source and a drain over the substrate on opposite sides of the gate. The transistor further includes a channel region beneath the gate separating the source from the drain, the channel region having a channel width with respect to a surface of the substrate greater than a width of the gate with respect to the surface of the substrate. The transistor further includes a silicide over a first portion of the drain, wherein a second portion of the drain, closer to the gate than the first portion, is an unsilicided region. |
| 申请公布号 |
US2016087060(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514958070 |
申请日期 |
2015.12.03 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG Harry-Hak-Lay;TEO Lee-Wee;ZHU Ming |
| 分类号 |
H01L29/45;H01L29/417;H01L29/78;H01L29/49 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor, comprising:
a substrate; a gate over the substrate; a source and a drain over the substrate on opposite sides of the gate; a channel region beneath the gate separating the source from the drain, the channel region having a channel width with respect to a surface of the substrate greater than a width of the gate with respect to the surface of the substrate; and a silicide over a first portion of the drain, wherein a second portion of the drain is an unsilicided region, and the second portion is closer to the gate than the first portion. |
| 地址 |
Hsinchu TW |
