| 发明名称 |
MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetic memory includes a magnetic element, and a metal layer stacked on the magnetic element. H/D>1.47 is satisfied, where H denotes a sum of thicknesses of the magnetic element and the metal layer in a first direction in which the magnetic element and the metal layer are stacked, and D denotes a width of the magnetic element in a second direction perpendicular to the first direction. |
| 申请公布号 |
US2016087004(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514635920 |
申请日期 |
2015.03.02 |
| 申请人 |
SONODA Yasuyuki;LEE Min Suk;HWANG Ji Hwan;SHIN Chang Hyup;YOSHIKAWA Masatoshi |
发明人 |
SONODA Yasuyuki;LEE Min Suk;HWANG Ji Hwan;SHIN Chang Hyup;YOSHIKAWA Masatoshi |
| 分类号 |
H01L27/22;G11C11/16;H01L43/12;H01L43/02;H01L43/08 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory comprising:
a magnetic element; and a metal layer stacked on the magnetic element, wherein H/D>1.47 is satisfied, where H denotes a sum of thicknesses of the magnetic element and the metal layer in a first direction in which the magnetic element and the metal layer are stacked, and D denotes a width of the magnetic element in a second direction perpendicular to the first direction. |
| 地址 |
Seoul KR |
