RESISTIVE MEMORY DEVICES

摘要

Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

主权项

1. A method comprising:
forming a resistive memory cell including:
forming a first electrode;forming a dielectric structured as an operably variable resistance region on the first electrode:forming a metallic barrier in a region between the dielectric and a second electrode, the metallic barrier formed with a structure and a material composition providing oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell, the first threshold greater than the second threshold, the structure and material composition selected to maintain a metallic state or a semiconducting state during cell operation to provide oxygen movement to allow a low resistance to the resistive memory cell; andforming the second electrode.