| 摘要 |
A method for manufacturing semiconductor devices is provided with a preparation step, a flow step, and a treatment step. In the preparation step, a liquid in which titanium has been dissolved beforehand in an ammonia hydrogen peroxide solution before being used for etching is prepared as an etching solution. In the flow step, flow of the etching solution is performed after the preparation step to make the concentration of the etching solution in a treatment tank homogeneous. In the treatment step, after the flow step is started, a semiconductor wafer provided with a metal film is placed inside the treatment tank to etch the metal film with the etching solution. It is preferable that the metal film is titanium and it is preferable that the temperature of the etching solution is made to be uniform during the treatment step using a measuring means for measuring the temperature of the etching solution. |
