SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion.

主权项

1. A semiconductor light emitting element comprising:
a first semiconductor layer of a first conductivity type; a pit formation layer formed on said first semiconductor layer and having a pyramidal pit caused by a threading dislocation generated in said first semiconductor layer; an active layer formed on said pit formation layer and having a flat portion and an embedded portion which is formed so as to embed said pit; and a second semiconductor formed on said active layer and having a second conductivity type which is opposite to the first conductivity type, wherein said active layer has a multi-quantum well structure having at least one well layer and at least one barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another, said flat portion has at least one flat well portion corresponding to said at least one well layer, said embedded portion has at least one embedded well portion corresponding to said at least one well layer, each of said at least one embedded well portion has at least one ring portion which is formed in an interface with each of said at least one flat well portion so as to surround said threading dislocation, each of said at least one ring portion has a band gap smaller than that of each of said at least one flat well portion.