发明名称 |
HIGH NEAR INFRARED SENSITIVITY IMAGE SENSOR |
摘要 |
An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer. |
申请公布号 |
US2016086999(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201414494960 |
申请日期 |
2014.09.24 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
Mao Duli;Venezia Vincent;Chen Gang;Yang Dajiang;Tai Dyson H. |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Santa Clara CA US |