发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER HAVING PROTRUDING BOTTOM PORTION AND METHOD FOR FORMING THE SAME |
摘要 |
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on the sidewall of the gate stack structure, and the gate spacers include a top portion and a bottom portion adjoined to the top portion, and the bottom portion slopes to a top surface of the substrate. The semiconductor device structure further includes an epitaxial structure formed adjacent to the gate spacers, and the epitaxial structure is formed below the gate spacers. |
申请公布号 |
US2016086945(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201414490888 |
申请日期 |
2014.09.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LIU Yung-Tsun |
分类号 |
H01L27/092;H01L29/423;H01L29/161;H01L21/8258;H01L29/26;H01L29/66;H01L21/441;H01L21/465;H01L29/78;H01L29/08 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device structure, comprising:
a substrate; a gate stack structure formed on the substrate; gate spacers formed on the sidewall of the gate stack structure, wherein the gate spacers comprise a top portion and a bottom portion adjoined to the top portion, and the bottom portion slopes to a top surface of the substrate; and an epitaxial structure formed adjacent to the gate spacers, wherein the epitaxial structure is formed below the gate spacers. |
地址 |
Hsin-Chu TW |