发明名称 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, BLOCK COPOLYMER AND METHOD FOR PRODUCING BLOCK COPOLYMER
摘要 This block copolymer comprises a block of a repeating unit represented by one of general formulae (I-1)-(I-3) and a block of a repeating unit represented by general formula (II). (In the formulae, R1 represents an alkyl group, a cycloalkyl group, an aryl group or the like; R2 represents an alkyl group or the like; each of R3 and R4 represents an alkyl group or the like; R5 represents a hydrogen atom, an alkyl group or the like; and R6 represents an alkyl group or cycloalkyl group which has at least two or more hydroxyl groups, a carboxyl group or the like.) A fine pattern that is formed by self-assembling lithography using a graphoepitaxy method with use of a block copolymer of the present invention has a high-definition high-quality lamellar shape in comparison to fine patterns that are formed by a similar technique using PS-b-PMMA or the like as the block copolymer.
申请公布号 WO2016043005(A1) 申请公布日期 2016.03.24
申请号 WO2015JP74112 申请日期 2015.08.26
申请人 FUJIFILM CORPORATION 发明人 YOSHIDA HAYATO;KIMURA KEIZO;MIZUTANI KAZUYOSHI
分类号 H01L21/027;G03F7/40 主分类号 H01L21/027
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