PACKAGED RF AMPLIFIER DEVICES WITH GROUNDED ISOLATION STRUCTURES AND METHODS OF MANUFACTURE THEREOF

摘要

An embodiment of a packaged RF amplifier device includes a device substrate, a transistor die coupled to the device substrate, and an isolation structure coupled to the transistor die. The transistor die has a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface. The isolation structure is coupled to the conductive structure and extends into an area above the top die surface between the first and second transistors. The isolation structure may be a wirebond fence, a conductive wall, conductive pillars or vias, or a plated trench that extends vertically upward from the conductive structure. The device may be encapsulated with molding compound.

主权项

1. A packaged radio frequency (RF) amplifier device comprising:
a device substrate having a top substrate surface; a transistor die coupled to the top substrate surface, wherein the transistor die includes a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface; and an isolation structure coupled to the conductive structure and extending into an area above the top die surface between the first and second transistors.