| 主权项 |
1. A light-emitting diode, comprising:
a stacked semiconductor layer structure, comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, and said active layer disposed between said first-type semiconductor layer and said second-type semiconductor layer; and a first electrode and a second electrode, disposed on the same side of said stacked semiconductor layer structure, said first electrode disposed on said first-type semiconductor layer, and said second electrode disposed on said second-type semiconductor layer; wherein said first electrode comprises a single metal reflective layer and a pad layer; said pad layer is disposed on said single metal reflective layer; the thickness of said single metal reflective layer is greater than said active layer; the height of the bottom of said single metal reflective layer is lower than the height of the bottom of said active layer; the height of the top of said single metal reflective layer is higher than the height of the top of said active layer; and at least a portion of light emitted from said active layer is reflected by said single metal reflective layer. |
