POWER LDMOS SEMICONDUCTOR DEVICE WITH REDUCED ON-RESISTANCE AND MANUFACTURING METHOD THEREOF

摘要

An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

主权项

1. A method for manufacturing an electronic semiconductor device, comprising:
forming a first structural region, having a first conductivity, in a substrate, the first structural region including a first side and a second side orthogonal to an axis; forming, on the first side of the first structural region, a second structural region having the first type of conductivity and a first side exposed; forming a body region, having a second conductivity opposite to the first conductivity, in the second structural region on the first side of the second structural region; forming a source region, having the first conductivity, within the body region and facing the first side of the second structural region; forming a gate electrode on the first side of the second structural region, configured to generate a conductive channel in said body region between the source region and the second structural region; removing, at a first side of the gate electrode, selective portions of the second structural region and of the first structural region aligned to one another along a direction parallel to said axis thus forming a first trench extending completely through the second structural region and through a portion of the first structural region; forming, in said first trench, a first trench conductive region electrically insulated from the second structural region; removing, at a second side, opposite to the first side, of the gate electrode, selective portions of the source region, of the body region, and of the second structural region aligned to one another along a respective direction parallel to said axis thus forming a second trench; and forming, in the second trench, a second trench conductive region electrically insulated from the second structural region and in electrical contact with the body region and the source region.