| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device according to an embodiment includes a wide bandgap semiconductor layer, a gate electrode and a gate insulating film provided between the wide bandgap semiconductor layer and the gate electrode. The gate insulating film includes a first insulating film having a thickness of 7 nm or greater, a fixed charge film provided on the first insulating film, the fixed charge film containing fixed charge and a second insulating film provided on the fixed charge film, the second insulating film having a thickness of 7 nm or greater. The gate insulating film has a total thickness of 25 nm or greater. |
| 申请公布号 |
US2016087064(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514813651 |
申请日期 |
2015.07.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
OHASHI Teruyuki;Iijima Ryosuke;Shimizu Tatsuo |
| 分类号 |
H01L29/51;H01L29/20;H01L29/49;H01L21/3105;H01L29/423;H01L21/28;H01L21/04;H01L21/263;H01L29/16;H01L29/40 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a wide bandgap semiconductor layer; a gate electrode; and a gate insulating film provided between the wide bandgap semiconductor layer and the gate electrode, the gate insulating film including: a first insulating film having a thickness of 7 nm or greater; a fixed charge film provided on the first insulating film, the fixed charge film containing fixed charge; and a second insulating film provided on the fixed charge film, the second insulating film having a thickness of 7 nm or greater, the gate insulating film having a total thickness of 25 nm or greater. |
| 地址 |
Minato-ku JP |
