| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided. |
| 申请公布号 |
US2016087063(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514696616 |
申请日期 |
2015.04.27 |
| 申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Yin Huaxiang;Zhang Yongkui;Zhao Zhiguo;Lu Zhiyong;Zhu Huilong |
| 分类号 |
H01L29/49;H01L29/66;H01L29/10;H01L21/265;H01L27/088;H01L29/78;H01L21/8234;H01L21/324 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. |
| 地址 |
Beijing CN |
