| 发明名称 |
EPITAXIAL SILICON WAFER |
| 摘要 |
An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. Further, the W concentration obtained by the metal analysis of the surface of the silicon epitaxial layer using the inductively coupled plasma mass spectrometry is preferably 1×107 atoms/cm2 or less. |
| 申请公布号 |
US2016087049(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514856005 |
申请日期 |
2015.09.16 |
| 申请人 |
SUMCO CORPORATION |
发明人 |
GOTO Motoki;KUROZUMI Yusuke;YOSHITAKE Kan;TAKAMIYA Hitoshi |
| 分类号 |
H01L29/36 |
主分类号 |
H01L29/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An epitaxial silicon wafer comprising:
a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, wherein a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. |
| 地址 |
Tokyo JP |
