发明名称 |
SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES AND INCORPORATING DOTTED DIFFUSION |
摘要 |
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate. |
申请公布号 |
WO2016044349(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
WO2015US50298 |
申请日期 |
2015.09.15 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
WESTERBERG, STAFFAN;HARLEY, GABRIEL |
分类号 |
H01L31/18;H01L31/0368;H01L31/0392;H01L31/04 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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