发明名称 |
GATE CONTROL DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device according to an embodiments controls a gate voltage to be applied to a gate electrode of a junction field effect transistor including a source electrode, a drain electrode, and the gate electrode, the transistor having a first threshold voltage at which the transistor is turned on, and a second threshold at which conductivity modulation occurs in the transistor so as to make the gate voltage equal to or higher than the second threshold voltage when a forward current in a direction from the drain electrode toward the source electrode flows, and so as to make the time variation in gate voltage have a point from which the rate of the time variation starts decreasing at a voltage between the second threshold voltage and the first threshold voltage when the forward current to be shut down. |
申请公布号 |
US2016087625(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201514824228 |
申请日期 |
2015.08.12 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
IKEDA Kentaro;KURAGUCHI Masahiko |
分类号 |
H03K17/687;H01L29/20;H01L29/778 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
1. A gate control device configured to control a gate voltage to be applied to a gate electrode of a junction field effect transistor including a source electrode, a drain electrode, and the gate electrode, the transistor having a first threshold voltage at which the transistor is turned on, and a second threshold voltage at which conductivity modulation occurs in the transistor
so as to make the gate voltage equal to or higher than the second threshold voltage when a forward current in a direction from the drain electrode toward the source electrode flows, and so as to make a time variation in the gate voltage have a point from which a rate of the time variation starts decreasing at a voltage between the second threshold voltage and the first threshold voltage when the forward current to be shut down. |
地址 |
Minato-ku JP |