发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a high electrical reliability.SOLUTION: A method includes the following steps of: preparing a lead frame that has a support substrate, a source lead 5 and a gate lead 6; arranging on the support substrate a semiconductor chip that comprises a power MOSFET and that has a principal surface, a source electrode pad 11 formed on the principal surface, and a gate electrode pad 12 formed on the principal surface; mutually and electrically connecting between the source lead and the source electrode pad via a first conductive member (a wire 14); and mutually and electrically connecting between the gate lead and the gate electrode pad via a second conductive member (a wire 15).SELECTED DRAWING: Figure 1
申请公布号 JP2016040839(A) 申请公布日期 2016.03.24
申请号 JP20150210341 申请日期 2015.10.27
申请人 RENESAS ELECTRONICS CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC 发明人 SATO YUKIHIRO;HATA TOSHIYUKI
分类号 H01L25/07;H01L21/60;H01L23/48;H01L25/18 主分类号 H01L25/07
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