发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with a high electrical reliability.SOLUTION: A method includes the following steps of: preparing a lead frame that has a support substrate, a source lead 5 and a gate lead 6; arranging on the support substrate a semiconductor chip that comprises a power MOSFET and that has a principal surface, a source electrode pad 11 formed on the principal surface, and a gate electrode pad 12 formed on the principal surface; mutually and electrically connecting between the source lead and the source electrode pad via a first conductive member (a wire 14); and mutually and electrically connecting between the gate lead and the gate electrode pad via a second conductive member (a wire 15).SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016040839(A) |
申请公布日期 |
2016.03.24 |
申请号 |
JP20150210341 |
申请日期 |
2015.10.27 |
申请人 |
RENESAS ELECTRONICS CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC |
发明人 |
SATO YUKIHIRO;HATA TOSHIYUKI |
分类号 |
H01L25/07;H01L21/60;H01L23/48;H01L25/18 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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