发明名称 SEMICONDUCTOR DEVICE
摘要 The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same.
申请公布号 US2016087622(A1) 申请公布日期 2016.03.24
申请号 US201514856059 申请日期 2015.09.16
申请人 Renesas Electronics Corporation 发明人 KAERIYAMA Shunichi
分类号 H03K17/082 主分类号 H03K17/082
代理机构 代理人
主权项 1. A semiconductor device comprising: a power transistor; a sense transistor having a gate connected to a gate of the power transistor and a collector or drain connected to a collector or drain of the power transistor; a first operational amplifier having a first input terminal connected to an emitter or source of the sense transistor and a second input terminal connected to an emitter or source of the power transistor; a resistor element having one end connected to the emitter or source of the sense transistor and another end connected to a first node; and an adjustment transistor placed between the first node and a low-voltage power supply and having a base or gate supplied with an output of the first operational amplifier, wherein the first operational amplifier adjusts a current flowing through the adjustment transistor so that a voltage of the emitter or source of the power transistor and a voltage of the emitter or source of the sense transistor are substantially the same.
地址 Tokyo JP