发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same. |
申请公布号 |
US2016087622(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201514856059 |
申请日期 |
2015.09.16 |
申请人 |
Renesas Electronics Corporation |
发明人 |
KAERIYAMA Shunichi |
分类号 |
H03K17/082 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a power transistor; a sense transistor having a gate connected to a gate of the power transistor and a collector or drain connected to a collector or drain of the power transistor; a first operational amplifier having a first input terminal connected to an emitter or source of the sense transistor and a second input terminal connected to an emitter or source of the power transistor; a resistor element having one end connected to the emitter or source of the sense transistor and another end connected to a first node; and an adjustment transistor placed between the first node and a low-voltage power supply and having a base or gate supplied with an output of the first operational amplifier, wherein the first operational amplifier adjusts a current flowing through the adjustment transistor so that a voltage of the emitter or source of the power transistor and a voltage of the emitter or source of the sense transistor are substantially the same. |
地址 |
Tokyo JP |