发明名称 |
Bootstrap Circuit |
摘要 |
A bootstrap circuit includes an N-channel MOS transistor including: a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor; a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer; a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer; a first electrode electrically connected to the P-type semiconductor layer; a second electrode electrically connected to the second N-type semiconductor layer; and a power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode. |
申请公布号 |
US2016087529(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201414490899 |
申请日期 |
2014.09.19 |
申请人 |
Sanken Electric Co., LTD. |
发明人 |
Sakai Kunitaka;Maekawa Yuuya;Hara Masato;Kubota Hideyuki |
分类号 |
H02M3/158 |
主分类号 |
H02M3/158 |
代理机构 |
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代理人 |
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主权项 |
1. A bootstrap circuit comprising:
an N-channel MOS transistor including:
a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor;a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer;a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer;a first electrode electrically connected to the P-type semiconductor layer;a second electrode electrically connected to the second N-type semiconductor layer; anda power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode. |
地址 |
Niiza-shi JP |