发明名称 Bootstrap Circuit
摘要 A bootstrap circuit includes an N-channel MOS transistor including: a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor; a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer; a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer; a first electrode electrically connected to the P-type semiconductor layer; a second electrode electrically connected to the second N-type semiconductor layer; and a power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode.
申请公布号 US2016087529(A1) 申请公布日期 2016.03.24
申请号 US201414490899 申请日期 2014.09.19
申请人 Sanken Electric Co., LTD. 发明人 Sakai Kunitaka;Maekawa Yuuya;Hara Masato;Kubota Hideyuki
分类号 H02M3/158 主分类号 H02M3/158
代理机构 代理人
主权项 1. A bootstrap circuit comprising: an N-channel MOS transistor including: a first N-type semiconductor layer formed on a surface of a P-type semiconductor substrate and electrically connected to a bootstrap capacitor;a P-type semiconductor layer formed on a surface of the first N-type semiconductor layer;a second N-type semiconductor layer formed on a surface of the P-type semiconductor layer;a first electrode electrically connected to the P-type semiconductor layer;a second electrode electrically connected to the second N-type semiconductor layer; anda power-source terminal connected to each of the first electrode and the second electrode for supplying a power-source voltage thereto, the N-channel MOS transistor supplying power to the bootstrap capacitor, and a current limiting element connected between the power-source terminal and the first electrode.
地址 Niiza-shi JP