| 摘要 |
In the present method, a substrate to be processed, having an interlayer insulation film, is prepared (step 1); the interlayer insulation film is subjected to dry etching, while using an intervening mask layer, thereby forming recessed parts (step 2); residue is removed by dry ashing (step 3); a coating is formed on the entire surface by means of a gas process using a coating-use compound gas, with a molecular structure having at one terminal a first substitution group that reacts with and bonds with the surface of the interlayer insulation film, and at the other terminal a second substitution group that is hydrophilic (step 4); the coating is removed by wet cleaning (step 5); and wiring is formed in the recessed parts (step 6). |
