| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a novel structure, which can retain storage contents even in a situation where power is not supplied during storage retention period and which has no limits on the number of write times.SOLUTION: A semiconductor device comprises a transistor and a capacitative element. The transistor includes a first oxide semiconductor layer, a source electrode and a drain electrode which contact the first oxide semiconductor layer, a gate electrode overlapping the first oxide semiconductor layer and a gate insulation layer provided between the first oxide semiconductor layer and the gate electrode. The capacitative element includes a source electrode or a drain electrode, a second oxide semiconductor layer which contacts the source electrode or the drain electrode and a capacitative element electrode which contacts the second oxide semiconductor layer.SELECTED DRAWING: Figure 1 |
