发明名称 |
MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM |
摘要 |
Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. |
申请公布号 |
US2016087139(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201514961261 |
申请日期 |
2015.12.07 |
申请人 |
InVisage Technologies, Inc. |
发明人 |
Ivanov Igor Constantin;Sargent Edward Hartley;Tian Hui |
分类号 |
H01L31/101;H01L31/0384;H01L31/0224 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
1. An optically sensitive device comprising:
a first contact; an n-type semiconductor; an optically sensitive material comprising a p-type semiconductor; a second contact; the magnitude of the work function of the optically sensitive material being at least 0.4 eV greater than the magnitude of the work function of the second contact; the optically sensitive material having an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact; the n-type semiconductor providing injection of electrons and blocking the extraction of holes; and the interface between the n-type semiconductor and the optically sensitive material providing a surface recombination velocity less than 1 cm/s. |
地址 |
Menlo Park CA US |