发明名称 |
METHOD FOR MAKING A PHOTOLITHOGRAPHY MASK INTENDED FOR THE FORMATION OF CONTACTS, MASK AND INTEGRATED CIRCUIT CORRESPONDING THERETO |
摘要 |
A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold. |
申请公布号 |
US2016086883(A1) |
申请公布日期 |
2016.03.24 |
申请号 |
US201514956903 |
申请日期 |
2015.12.02 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
BOUTON GUILHEM;REGNIER PATRICK |
分类号 |
H01L23/528;H01L23/522;G03F1/50;H01L23/00 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
ROUSSET FR |