| 摘要 |
According to one embodiment, a semiconductor device comprises of a semiconductor layer, electrodes, an insulating film, a plurality of gate electrodes, gate insulating films, a first interlayer insulating film, a withdrawing unit, a second interlayer insulating film, and a plurality of gate contacts. The semiconductor layer comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; and a third semiconductor layer of the first conductivity type on the second semiconductor layer. The electrodes are installed in the first semiconductor layer and extended toward a first direction. The insulating layer is formed between the electrodes and the first semiconductor layer. The gate electrodes are installed on the electrodes, face the second semiconductor layer and the third semiconductor layer, and extended toward the first direction. The gate insulating films are formed between the gate electrodes and the second semiconductor layer, and between the gate electrodes and the third semiconductor layer. The first interlayer insulating film is formed between the electrodes and the gate electrodes. The withdrawing unit is installed in the outside of one end of the first direction of the gate electrodes, extended toward a second direction which crosses the first direction, and mutually connected to the electrodes. The second interlayer insulating film is formed between the end of the gate electrodes and the withdrawing unit. The gate contacts are installed on the gate electrodes, and connected to the gate electrodes. |
