| 发明名称 |
METHOD OF MAKING A GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA |
| 摘要 |
A method of making a graphene base transistor with reduced collector area comprising forming a graphene material layer, forming a collector material, depositing a dielectric, planarizing the dielectric, cleaning and removing the native oxide, transferring a base graphene material layer to the top surface of the graphene material layer, bonding the base graphene material layer, and photostepping and defining a second graphene material layer. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region. A graphene base transistor with reduced collector area comprising an electron emitter region, an electron collection region, and a base region. |
| 申请公布号 |
US2016087087(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514952422 |
申请日期 |
2015.11.25 |
| 申请人 |
The Government of the United States of America, as represented by the Secretary of the Navy |
发明人 |
Kub Francis J.;Anderson Travis J.;Koehler Andrew D. |
| 分类号 |
H01L29/732;H01L29/267;H01L29/66;H01L29/16 |
主分类号 |
H01L29/732 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a graphene base transistor with reduced collector area comprising:
forming a graphene material layer with a right and left lateral side portion over the top of a third region right and left side material; forming a collector material on a substrate; depositing a dielectric in the third region right and left side material; planarizing the dielectric in the third region right and left side material; cleaning and removing the native oxide on the top surface of the collector material; transferring a base graphene material layer to the top surface of the graphene material layer; bonding the base graphene material layer; and photo stepping and defining a second graphene material layer to the top surface of the graphene material layer. |
| 地址 |
Washington DC US |
