SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes an SOI substrate and a MISFET formed on the SOI substrate. The SOI substrate has a base substrate, a ground plane region formed on the base substrate, a BOX layer formed on the ground plane region and an SOI layer formed on the BOX layer. The base substrate is made of silicon and the ground plane region includes a semiconductor region made of silicon carbide.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; and a field effect transistor formed on the semiconductor substrate, wherein the semiconductor substrate has: a first base substrate; a first semiconductor region of a first conductivity type formed on the first base substrate or in an upper layer part of the first base substrate; an insulating layer formed on the first semiconductor region; and a semiconductor layer formed on the insulating layer, the first base substrate is made of silicon, and the first semiconductor region is made of silicon carbide.