| 发明名称 |
FIN-TYPE GRAPHENE DEVICE |
| 摘要 |
Example embodiments relate to a fin-type graphene device. The fin-type graphene device includes a substrate, a graphene channel layer substantially vertical to the substrate, a gate insulating layer that covers one side surface of the graphene channel layer, a gate electrode on the gate insulating layer, and a source electrode and a drain electrode that are formed separately from each other on other side surface of the graphene channel layer. |
| 申请公布号 |
US2016087042(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514747243 |
申请日期 |
2015.06.23 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Minhyun;LEE Jaeho;HEO Jinseong;LEE Kiyoung |
| 分类号 |
H01L29/16;H01L29/417;H01L29/45;H01L29/786 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A graphene device comprising:
a substrate; a graphene channel layer substantially vertical to the substrate; a gate insulating layer substantially covering one side surface of the graphene channel layer; a gate electrode on the gate insulating layer; and a source electrode and a separate drain electrode on an other side surface of the graphene channel layer. |
| 地址 |
Suwon-si KR |
