| 发明名称 |
Semiconductor Device with Variable Resistive Element |
| 摘要 |
A semiconductor device includes a semiconductor body including a drift zone that forms a pn junction with an emitter region. A first load electrode is at a front side of the semiconductor body. A second load electrode is at a rear side of the semiconductor body opposite to the front side. One or more variable resistive elements are electrically connected in a controlled path between the drift zone and one of the first and second load electrodes. The variable resistive elements activate and deactivate electronic elements of the semiconductor device in response to a change of the operational state of the semiconductor device. |
| 申请公布号 |
US2016087005(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514856764 |
申请日期 |
2015.09.17 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Philippou Alexander;Jaeger Christian;Laven Johannes Georg;Pfirsch Frank Dieter |
| 分类号 |
H01L27/24;H01L29/06;H01L29/10;H01L29/08;H01L29/739;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body comprising a drift zone forming a pn junction with an emitter region; a first load electrode at a front side of the semiconductor body; a second load electrode at a rear side of the semiconductor body opposite to the front side; and one or more variable resistive elements electrically connected in a controlled path between the drift zone and one of the first and second load electrodes. |
| 地址 |
Neubiberg DE |
