REPLACEMENT METAL GATE

摘要

A semiconductor structure which includes: a fin on a semiconductor substrate; and a gate structure wrapped around the fin. The gate structure includes: spaced apart spacers to form an opening, the spacers being perpendicular to the fin, the spacers having a height with respect to the fin; a high-k dielectric material in the opening and over the fin, the high-k dielectric material in contact with the spacers and a bottom of the opening; a work function metal in contact with the high-k dielectric material that is over the fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; and a metal completely filling the opening.

主权项

1. A semiconductor structure comprising:
at least one fin on a semiconductor substrate; and a gate structure wrapped around the at least one fin, the gate structure comprising:
spaced apart spacers to form an opening, the spacers being perpendicular to the at least one fin, the spacers having a height with respect to the at least one fin;a high dielectric constant (high-k) dielectric material in the opening and over the at least one fin, the high-k dielectric material in contact with the spacers and a bottom of the opening;a work function metal in contact with the high-k dielectric material that is over the at least one fin, the spacers and the bottom of the opening, the work function metal that is in contact with the high-k dielectric material having a height in the opening that is less than the height of the spacers, the high-k dielectric material and the work function metal only partially filling the opening; anda metal completely filling the opening.