GaN STRUCTURES

摘要

A semiconductor device is disclosed. The device includes a substrate including GaN, a two dimensional electron gas (2DEG) inducing layer on the substrate, and a lateral transistor on the 2DEG inducing layer. The lateral transistor includes source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a field plate between the gate and the drain contact. The device also includes one or more insulation layers on the 2DEG inducing layer, where the field plate is spaced apart from the 2DEG inducing layer by the insulation layers, and a conductor on the insulation layers, where a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.

主权项

1. A semiconductor device, comprising:
a substrate comprising GaN; a two dimensional electron gas (2DEG) inducing layer on the substrate; a lateral transistor on the 2DEG inducing layer, the lateral transistor comprising:
source and drain contacts to the 2DEG inducing layer,a gate stack between the source and drain contacts, anda field plate between the gate and the drain contact; one or more insulation layers on the 2DEG inducing layer, wherein the field plate is spaced apart from the 2DEG inducing layer by the insulation layers; and a conductor on the insulation layers, wherein a first portion of the conductor is spaced apart from the 2DEG inducing layer by the insulation layers by a distance less than 200 nm.