SELECTIVE AREA DEPOSITION OF METAL FILMS BY ATOMIC LAYER DEPOSITION (ALD) AND CHEMICAL VAPOR DEPOSITION (CVD)

摘要

Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.

主权项

1. A method of fabricating a metallization structure for an integrated circuit, the method comprising:
forming an exposed surface above a substrate, the exposed surface comprising regions of exposed dielectric material and regions of exposed metal; and forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material, wherein forming the metal layer by using the selective metal deposition process comprises forming a metal layer selected from the group consisting of Fe and Mo.