| 发明名称 |
Method for Manufacturing a Composite Wafer having a Graphite Core, and Composite Wafer having a Graphite Core |
| 摘要 |
A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer. |
| 申请公布号 |
US2016086844(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514962393 |
申请日期 |
2015.12.08 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Berger Rudolf;Gruber Hermann;Lehnert Wolfgang;Ruhl Guenther;Foerg Raimund;Mauder Anton;Schulze Hans-Joachim;Kellermann Karsten;Sommer Michael;Rottmair Christian;Rupp Roland |
| 分类号 |
H01L21/762;H01L21/321;H01L21/265;H01L29/20;H01L21/324;H01L21/02;H01L29/16 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a composite wafer, the method comprising:
providing a carrier wafer comprising graphite and a protective layer; forming a bonding layer; and bonding the carrier wafer to a semiconductor wafer through the bonding layer. |
| 地址 |
Neubiberg DE |
