| 摘要 |
Provided is a configuration having: a substrate placement member provided inside a reaction chamber for treating a substrate; a reaction gas supply unit for supplying a reaction gas for treating the substrate; a cleaning gas supply unit for supplying a fluorine-containing gas that includes at least one fluorine atom; a plasma mechanism for activating the reaction gas; and a control unit configured to control at least the reaction gas supply unit, the cleaning gas supply unit, and the plasma mechanism so as to supply the fluorine-containing gas into the reaction chamber in a state in which the substrate is removed from the reaction chamber, remove a deposited film deposited on the substrate placement member, supply the activated reaction gas into the reaction chamber, remove the fluorine atom bonded to the substrate placement member, and produce hydrophilicity on the surface of the substrate placement member. |
