Method for Disconnecting Polysilicon Stringers During Plasma Etching

摘要

A method of fabricating wordlines in semiconductor memory structures is disclosed that eliminates stringers between wordlines while maintaining a stable distribution of threshold voltage. A liner is deposited before performing a wordline etch, and a partial wordline etch is then performed. Remaining portions of the liner are removed, and the wordline etch is completed to form gates having vertical or tapered profiles.