Semiconductor Device and Method

摘要

A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel region within the nanowire. In additional embodiments multiple nanowires, multiple bottom contacts, multiple top contacts, and multiple gate contacts are utilized.

主权项

1. A semiconductor device comprising:
a first nanowire over a substrate, the first nanowire being perpendicular to the substrate and comprising a first source/drain region, a channel region over the first source/drain region, and a second source/drain region over the channel region; a first contact pad at least partially surrounding the first source/drain region; a gate electrode at least partially surrounding the channel region; and a second contact pad in electrical connection with the second source/drain region.